Temperature at which the device is to operate (in Degrees Celsius). Time-zero voltage across Bulk (substrate)-Source terminals (in Volts). Time-zero voltage across Gate-Source terminals (in Volts). Time-zero voltage across Drain-Source terminals (in Volts). Set to OFF to set terminal voltages to zero during operating point analysis.
(Default = 0).Įquivalent number of squares of the drain diffusion (Default = 1).Įquivalent number of squares of the source diffusion (Default = 1). Perimeter of source junction (in meters).
To access this dialog, simply double-click on the entry for the simulation model link in the Models region of the Component Properties dialog.Īrea of the Drain diffusion (in sq.meters).Īrea of the Source diffusion (in sq.meters). The following component-level parameters are definable for this model type and are listed on the Parameters tab of the Sim Model dialog. This program supports customer design investments by ensuring that selected devices are available during a minimum of 10 or 7 years from the notification date.Ĭheck-out the list of our certified STPOWER transistors and modules here.M SPICE Netlist Template %1 %2 %3 %3 ?"DRAIN AREA"| ?"SOURCE AREA"| ?"DRAIN PERIMETER"| ?"SOURCE PERIMETER"| &"STARTING CONDITION" ?"INITIAL D-S D-S VOLTAGE", G-S VOLTAGE", B-S VOLTAGE"| Parameters (definable at component level) STPOWER SiC MOSFETs are also included in the program, with a minimum longevity commitment of 7 years. ST has certified several ST POWER high-voltage MOSFETs, IGBTs and Intelligent Power Modules (IPMs) for 10-year longevity. ST’s 10-year longevity commitment program ensures stable and continuous supply for customers discrete and module) and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime. Our wide ST POWER product portfolio combined with state-of-the art packaging (i.e. Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 ☌ and voltage ranging from 650 to 2200 V. As well as, our Gallium Nitride on silicon substrate (GaN/Si) transistors allow highest efficiency and highest power density thanks to outstanding specific dynamic on-state resistance and small capacitances ranging to 100, 650 and 900 V.
ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1700 V and power bipolar transistors ranging from 15 to 1700 V. Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the ST POWER family.
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